Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2019
ISSN: 2045-2322
DOI: 10.1038/s41598-019-46186-9